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Temperature Dependence of Raman-Active In-Plane E<sub>2g</sub> Phonons in Layered Graphene and h-BN Flakes.

Author
Abstract
:

Thermal properties of sp2 systems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E2g optical phonon peaks (~ 1580 cm-1 in graphene layers and ~ 1362 cm-1 in h-BN layers) as a function of temperature from - 194 to 200 °C. The h-BN flakes show higher sensitivity to temperature-dependent frequency shifts and broadenings than graphene flakes. Moreover, the thermal effect in the c direction on phonon frequency in h-BN layers is more sensitive than that in graphene layers but on phonon broadening in h-BN layers is similar as that in graphene layers. These results are very useful to understand the thermal properties and related physical mechanisms in h-BN and graphene flakes for applications of thermal devices.

Year of Publication
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2018
Journal
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Nanoscale research letters
Volume
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13
Issue
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1
Number of Pages
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25
Date Published
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2018
ISSN Number
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1931-7573
URL
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https://dx.doi.org/10.1186/s11671-018-2444-2
DOI
:
10.1186/s11671-018-2444-2
Short Title
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Nanoscale Res Lett
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